ISO 14701:2018

недоступно на русском языке

Текущий статус : Опубликовано (Hа стадии пересмотра)

	Формат	Язык
std 1 92	PDF + ePub
std 2 92	Бумажный

CHF92

Пересчитать швейцарские франки (CHF) в ваша валюта

Тезис

This document specifies several methods for measuring the oxide thickness at the surfaces of (100) and (111) silicon wafers as an equivalent thickness of silicon dioxide when measured using X-ray photoelectron spectroscopy. It is only applicable to flat, polished samples and for instruments that incorporate an Al or Mg X-ray source, a sample stage that permits defined photoelectron emission angles and a spectrometer with an input lens that can be restricted to less than a 6° cone semi-angle. For thermal oxides in the range 1 nm to 8 nm thickness, using the best method described in this document, uncertainties, at a 95 % confidence level, could typically be around 2 % and around 1 % at optimum. A simpler method is also given with slightly poorer, but often adequate, uncertainties.

Общая информация

Текущий статус
: Опубликовано

Дата публикации
: 2018-11

Этап
: Систематический пересмотр между-народного стандарта [90.20]
Версия
: 2
Технический комитет :
ISO/TC 201/SC 7

ICS :
71.040.40
RSS обновления